ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS

被引：472

作者：

CHATTOPADHYAY, D

QUEISSER, HJ

机构：

来源：

REVIEWS OF MODERN PHYSICS | 1981年 / 53卷 / 04期

关键词：

D O I：

10.1103/RevModPhys.53.745

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：745 / 768

页数：24

共 174 条

[41] VARIATIONAL PRINCIPLES FOR SOLVING NONLINEAR POISSON EQUATIONS FOR POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS [J].

CSAVINSZKY, P .

PHYSICAL REVIEW B, 1976, 14 (10) :4483-4487

[42] THEORY OF SCREENING OF IMPURITY IONS IN SEMICONDUCTORS WITH SPATIALLY-VARIABLE DIELECTRIC-CONSTANTS [J].

CSAVINSZKY, P .

PHYSICAL REVIEW B, 1976, 14 (04) :1649-1659

[43] NOTE ON POTENTIAL OF IONIZED IMPURITIES IN SEMICONDUCTORS [J].

CSAVINSZKY, P .

PHILOSOPHICAL MAGAZINE, 1964, 10 (104) :231-&

[44] TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - COMBINATION OF VARIATIONAL AND PERTURBATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD [J].

CSAVINSZKY, P .

PHYSICAL REVIEW, 1963, 131 (05) :2033-&

[45] ELECTRON MOBILITIES BASED ON AN EXACT NUMERICAL-ANALYSIS OF THE DIELECTRIC-FUNCTION-DEPENDENT LINEARIZED POISSON EQUATION FOR THE POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS - COMMENT [J].

CSAVINSZKY, P ;

MORROW, RA .

PHYSICAL REVIEW B, 1981, 23 (08) :4263-4265

[46] VARIATIONAL TREATMENT OF POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS WITH SPATIALLY VARIABLE DIELECTRIC-CONSTANTS [J].

CSAVINSZKY, P .

INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1978, 13 (02) :221-226

[47]

CSAVINSZKY P, 1979, B AM PHYS SOC, V24, P277

[48] HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM [J].

CUEVAS, M ;

FRITZSCH.H .

PHYSICAL REVIEW, 1965, 139 (5A) :1628-&

[49] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .I. EXPERIMENT [J].

CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1021-&

[50] RELATION BETWEEN SURFACE CONCENTRATION AND AVERAGE CONDUCTIVITY IN DIFFUSED LAYERS IN GERMANIUM [J].

CUTTRISS, DB .

BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (02) :509-+

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