STRUCTURAL STUDIES OF HGCDTE GROWN BY MOCVD ON LATTICE-MATCHED SUBSTRATES

被引：7

作者：

BEVAN, MJ

GREGGI, J

DOYLE, NJ

机构：

[1] Westinghouse Science & Technology Center, Pittsburgh

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 07期

关键词：

D O I：

10.1557/JMR.1990.1475

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Improved structural quality Hg1–xCdxTe epitaxial films have been grown by metal organic chemical vapor deposition (MOCVD) using the interdiffused multilayer process (IMP) on lattice-matched CdZnTe substrates at temperatures above 400 °C with diethyltelluride. Double-crystal rocking curve data with values as low as 25 arcsec correlated with cross-sectional transmission electron micrographs. The process of growing alternate layers of HgTe/CdTe for improved compositional uniformity, and the inherent mismatch, was not detrimental to the structural quality, which was limited by that of the substrate. © 1990, Materials Research Society. All rights reserved.

引用

页码：1475 / 1479

页数：5

共 16 条

[1] IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].

BEVAN, MJ ;

WOODHOUSE, KT .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261

[2]

DEAN B, 1987, 3RD INT C 2 6 COMP M

[3] MATERIAL CHARACTERISTICS OF HG1-XCDXTE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

EDWALL, DD ;

GERTNER, ER ;

BUBULAC, LO .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :240-247

[4] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

[5] ORGANOMETALLIC EPITAXY OF HGCDTE ON CDTESE SUBSTRATES WITH HIGH COMPOSITIONAL UNIFORMITY [J].

GHANDHI, SK ;

BHAT, IB ;

FARDI, H .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :392-394

[6] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[7] METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF MERCURY CADMIUM TELLURIDE EPITAXIAL-FILMS [J].

HYLIANDS, MJ ;

THOMPSON, J ;

BEVAN, MJ ;

WOODHOUSE, KT ;

VINCENT, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2217-2225

[8] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[9] MOLECULAR-BEAM EPITAXY OF CDXHG1-X TE AT D.LETI LIR [J].

MILLION, A ;

DICIOCCIO, L ;

GAILLIARD, JP ;

PIAGUET, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2813-2820

[10] EVIDENCE OF ANOMALOUS BEHAVIOR IN LOW-N-TYPE MERCURY CADMIUM TELLURIDE INDUCED BY EXTENDED DEFECTS [J].

PELLICIARI, B ;

DESTEFANIS, GL ;

DICIOCCIO, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :314-320

← 1 2 →