SOLID-PHASE REACTION AND ELECTRICAL-PROPERTIES IN ZR/SI SYSTEM

The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10-8 Ω cm2 is obtained after annealing at 420°C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+-Si system. The formation of ZrSi2 is observed at annealing temperatures above 350°C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as-grown Zr films are 0.61 eV for p-type Si and 0.52 eV for n-type Si.