ROLE OF DIFFERENT LOCAL CENTERS IN DETERMINATION OF CONCENTRATION-DEPENDENCE OF INTRINSIC EMISSION INTENSITY IN N-TYPE GAAS

被引：7

作者：

GLINCHUK, KD

PROKHOROVICH, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 45卷 / 02期

关键词：

D O I：

10.1002/pssa.2210450244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / K94

页数：4

共 12 条

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[3] EFFECT OF 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS ON INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02) :777-785

[4]

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[8] ELECTRICAL AND OPTICAL PROPERTIES OF VAPOR-GROWN GAAS-SI [J].

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PHILIPSB.HV .

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[9] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

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[10]

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