EFFECT OF GAAS SURFACE RECONSTRUCTION ON INTERFACE STATE DENSITY OF EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES

被引：16

作者：

QIU, J

QIAN, QD

KOBAYASHI, M

GUNSHOR, RL

MENKE, DR

LI, D

OTSUKA, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：701 / 704

页数：4

共 29 条

[1] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843

[2]

CHUNG SK, 1987, IEEE T ELECTRON DEV, V34, P149, DOI 10.1109/T-ED.1987.22900

[3] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J].

CIRILLO, NC ;

SHUR, MS ;

VOLD, PJ ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :645-647

[4] FORMATION AND ELIMINATION OF SURFACE ION MILLING DEFECTS IN CADMIUM TELLURIDE, ZINC-SULFIDE AND ZINC SELENIDE [J].

CULLIS, AG ;

CHEW, NG ;

HUTCHISON, JL .

ULTRAMICROSCOPY, 1985, 17 (03) :203-211

[5] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS [J].

GUNSHOR, RL ;

KOLODZIEJSKI, LA ;

MELLOCH, MR ;

VAZIRI, M ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :200-202

[6]

GUNSHOR RL, 1989, 1988 P NATO ADV WORK, P229

[7]

Hahn H., 1949, Z ANORG CHEM, V259, P135

[8] ZNSE/GAAS HETEROINTERFACE STABILIZATION BY HIGH-TEMPERATURE SE TREATMENT OF GAAS SURFACE [J].

KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1597-L1599

[9] INTERPRETATION OF ELECTRICAL MEASUREMENTS ON GAAS-MOS SYSTEM [J].

KOHN, E ;

HARTNAGEL, HL .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :409-416

[10]

Kolodziejski L. A., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V796, P98, DOI 10.1117/12.941003

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