INFLUENCE OF LOCAL HEATING ON CURRENT-OPTICAL OUTPUT POWER CHARACTERISTICS IN GA1-XALXAS LASERS

[11] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 551 - 556

[12] STOKES ANTI-STOKES RAMAN VIBRATIONAL TEMPERATURES - REFERENCE MATERIALS, STANDARD LAMPS, AND SPECTROPHOTOMETRIC CALIBRATIONS [J]. APPLIED SPECTROSCOPY, 1983, 37 (04) : 315 - 333

[13] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648

[14] FACET OXIDE FORMATION AND DEGRADATION OF GAAS-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3133 - 3141

[15] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3992 - 4005

[16] STERN F, 1973, IEEE J QUANTUM ELECT, V9, P209

[17] ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND 5-LAYER HETEROSTRUCTURE (GAAL)AS-GAAS INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 481 - 488

[18] TEMPERATURE DISTRIBUTION ALONG THE STRIPED ACTIVE REGION IN HIGH-POWER GAALAS VISIBLE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1124 - 1128

[19] Todoroki S., 1983, 21st Annual Proceedings on Reliability Physics 1983, P160, DOI 10.1109/IRPS.1983.361978

[20] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469

[11] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 551 - 556

[12] STOKES ANTI-STOKES RAMAN VIBRATIONAL TEMPERATURES - REFERENCE MATERIALS, STANDARD LAMPS, AND SPECTROPHOTOMETRIC CALIBRATIONS [J]. APPLIED SPECTROSCOPY, 1983, 37 (04) : 315 - 333

[13] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648

[14] FACET OXIDE FORMATION AND DEGRADATION OF GAAS-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3133 - 3141

[15] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3992 - 4005

[16] STERN F, 1973, IEEE J QUANTUM ELECT, V9, P209

[17] ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND 5-LAYER HETEROSTRUCTURE (GAAL)AS-GAAS INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 481 - 488

[18] TEMPERATURE DISTRIBUTION ALONG THE STRIPED ACTIVE REGION IN HIGH-POWER GAALAS VISIBLE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1124 - 1128

[19] Todoroki S., 1983, 21st Annual Proceedings on Reliability Physics 1983, P160, DOI 10.1109/IRPS.1983.361978

[20] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469