RECOMBINATION-ENHANCED INTERACTIONS BETWEEN POINT-DEFECTS AND DISLOCATION CLIMB IN SEMICONDUCTORS

被引：21

作者：

LANG, DV ^{[1
]}

PETROFF, PM ^{[1
]}

LOGAN, RA ^{[1
]}

JOHNSTON, WD ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.42.1353

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interaction between 100 climb-induced dislocation networks and a naturally occurring deep level (the DX center) in AlxGa1-xAs has been analyzed by scanning deeplevel transient spectroscopy. The concentration of DX centers was observed to decrease markedly in the vicinity of climb-induced 100 networks, but remained nearly unchanged near glide-induced 110 dislocation networks. © 1979 The American Physical Society.

引用

页码：1353 / 1356

页数：4

共 24 条

[1]

Cottrell A.H., 1948, REPORT C STRENGTH SO, P30

[2]

HOLT DB, 1974, QUANTITATIVE SCANNIN, P335

[3]

Hull D., 1975, INTRO DISLOCATIONS

[4] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].