EFFECTS OF FAST-NEUTRON RADIATION ON THE ELECTRICAL-PROPERTIES OF SILICON DETECTORS

被引:32
作者
LI, Z
CHEN, W
KRANER, HW
机构
[1] Brookhaven National Laboratory, Upton
关键词
D O I
10.1016/0168-9002(91)90071-W
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (phi-n greater-than-or-equal-to 10(12) n/cm2), C-V characteristics of detectors with high resistivities (p greater-than-or-equal-to 1 k-OMEGA cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN2 temperature) detectors shows three anneal stages, while two anneal stages were observed in elevated temperature anneal.
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页码:585 / 595
页数:11
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