CALCULATED SMALL-SIGNAL CHARACTERISTICS FOR IRRADIATED PN JUNCTIONS

[1] ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 183 - +

[2] NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 50 - +

[3] GREGORY BL, PRIVATE COMMUNICATIO

[4] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 153 - +

[5] GWYN CW, TO BE PUBLISHED

[6] NAIK SS, 1972, THESIS U CALIFORNIA

[7] RADIATION PRODUCED TRAPPING EFFECTS IN DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 347 - 354

[8] OLDHAM WG, UNPUBLISHED DATA

[9] SAH CT, 1969, IEEE T ELECTRON DEV, V16, P345

[10] INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2890 - +

[1] ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 183 - +

[2] NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 50 - +

[3] GREGORY BL, PRIVATE COMMUNICATIO

[4] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 153 - +

[5] GWYN CW, TO BE PUBLISHED

[6] NAIK SS, 1972, THESIS U CALIFORNIA

[7] RADIATION PRODUCED TRAPPING EFFECTS IN DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 347 - 354

[8] OLDHAM WG, UNPUBLISHED DATA

[9] SAH CT, 1969, IEEE T ELECTRON DEV, V16, P345

[10] INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2890 - +