A MODEL FOR THE EFFECT OF LINE-WIDTH AND MECHANICAL STRENGTH ON ELECTROMIGRATION FAILURE OF INTERCONNECTS WITH NEAR-BAMBOO GRAIN STRUCTURES

被引：61

作者：

ARZT, E

NIX, WD

机构：

[1] Department of Materials Science and Engineering, Stanford University, Stanford, California

来源：

JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1557/JMR.1991.0731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple analytical model for the effect of mechanical strength and line width (for the case of narrow lines) on the electromigration failure of metallic interconnects is presented. Because the line width/grain size ratio and the diffusivity enter differently in the model, application of the resulting failure time equation to published data can provide insight into the mechanisms of enhancement of electromigration resistance by grain structure optimization and alloying.

引用

页码：731 / 736

页数：6

共 18 条

[11] ANOMALOUS LARGE GRAINS IN ALLOYED ALUMINUM THIN-FILMS .2. ELECTROMIGRATION AND DIFFUSION IN THIN-FILMS WITH VERY LARGE GRAINS
GANGULEE, A
DHEURLE, FM
[J]. THIN SOLID FILMS, 1973, 16 (02) : 227 - 236
[12] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES
KINSBRON, E
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970
[13] KINSBRON E, 1977, THIN SOLID FILMS, V446, P139
[14] PALMER IG, 1988, DISPERSION STRENGTHE, P217
[15] SANCHEZ J, 1990, IN PRESS APPL PHYS L
[16] A MODEL FOR CONDUCTOR FAILURE CONSIDERING DIFFUSION CONCURRENTLY WITH ELECTROMIGRATION RESULTING IN A CURRENT EXPONENT OF 2
SHATZKES, M
LLOYD, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3890 - 3893
[17] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU
VAIDYA, S
SHENG, TT
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466
[18] EFFECT OF TEXTURE AND GRAIN-STRUCTURE ON ELECTROMIGRATION IN AL-0.5-PERCENT CU THIN-FILMS
VAIDYA, S
SINHA, AK
[J]. THIN SOLID FILMS, 1981, 75 (03) : 253 - 259

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