PREPARATION AND PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED BY GLOW DISCHARGE TECHNIQUE

被引：17

作者：

KATTO, H

KOGA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 10期

关键词：

D O I：

10.1149/1.2407796

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1619 / &

相关论文

共 15 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &
[2] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
FLEMING, PJ
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[3] INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES
DUFFY, MT
REVESZ, AG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 372 - +
[4] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON
FERRIEU, E
PRUNIAUX, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1008 - +
[5] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
HU, SM
GREGOR, LV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 826 - +
[6] Nishimatsu S., 1969, Thin film dielectrics, P338
[7] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
PLISKIN, WA
CONRAD, EE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &
[8] RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON
SALAMA, CAT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 913 - &
[9] ION TRANSPORT PHENOMENA IN INSULATING FILMS
SNOW, EH
GROVE, AS
DEAL, BE
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &
[10] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES
SNOW, EH
GROVE, AS
FITZGERALD, DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +