SPATIAL-DISTRIBUTION OF DOMINANT ELECTRON AND HOLE TRAPS IN PLASTICALLY DEFORMED GAAS

被引：12

作者：

WOSINSKI, T ^{[1
]}

BREITENSTEIN, O ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRMIKROSKOPIE,DDR-4020 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 01期

关键词：

D O I：

10.1002/pssa.2210960138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：311 / 315

页数：5

共 12 条

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[6] NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT [J].

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[10] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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