SCANNING DEEP LEVEL TRANSIENT SPECTROSCOPY (SDLTS)

[1] CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2217 - 2225

[2] A CAPACITANCE METER OF HIGH ABSOLUTE SENSITIVITY SUITABLE FOR SCANNING DLTS APPLICATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01): : 159 - 167

[3] COMBINED ELECTRON MICROSCOPICAL AND DLTS (ESP, DSLTS) INVESTIGATIONS IN SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 207 - 215

[4] SCANNING-DLTS INVESTIGATION OF THE EL-2 LEVEL IN PLASTICALLY DEFORMED GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : K107 - &

[5] BREITENSTEIN O, 1984, UNPUB

[6] TRANSIENT DISTORTION AND NTH ORDER FILTERING IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DNLTS) [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 25 - 36

[7] SCANNED LIGHT-PULSE TECHNIQUE FOR THE INVESTIGATION OF INSULATOR SEMICONDUCTOR INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5245 - 5251

[8] FERENCZI G, 1984, COMMUNICATION

[9] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09): : 1032 - 1042

[10] HEYDENREICH J, UNPUB J MICR

[1] CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2217 - 2225

[2] A CAPACITANCE METER OF HIGH ABSOLUTE SENSITIVITY SUITABLE FOR SCANNING DLTS APPLICATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01): : 159 - 167

[3] COMBINED ELECTRON MICROSCOPICAL AND DLTS (ESP, DSLTS) INVESTIGATIONS IN SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 207 - 215

[4] SCANNING-DLTS INVESTIGATION OF THE EL-2 LEVEL IN PLASTICALLY DEFORMED GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : K107 - &

[5] BREITENSTEIN O, 1984, UNPUB

[6] TRANSIENT DISTORTION AND NTH ORDER FILTERING IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DNLTS) [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 25 - 36

[7] SCANNED LIGHT-PULSE TECHNIQUE FOR THE INVESTIGATION OF INSULATOR SEMICONDUCTOR INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5245 - 5251

[8] FERENCZI G, 1984, COMMUNICATION

[9] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09): : 1032 - 1042

[10] HEYDENREICH J, UNPUB J MICR