ULTRAFAST OPTOELECTRONIC FERROMAGNETIC SEMICONDUCTOR CDCR2SE4 SWITCH

被引：4

作者：

WALSER, AD

ALFANO, RR

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：592 / 594

页数：3

共 14 条

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DOWNEY, PM ;

AUSTON, DH ;

SMITH, PR .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :215-217

[5]

HO PP, 1986, IEEE J QUANTUM ELECT, V22, P205

[6] PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON [J].

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AUSTON, DH ;

SMITH, PR ;

BEAN, JC ;

HARBISON, JP ;

ADAMS, AC .

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[7] FMR STUDIES OF AG-DOPED CDCR2SE4 [J].

LARSON, GH ;

SLEIGHT, AW .

PHYSICS LETTERS A, 1968, A 28 (03) :203-&

[8] PICOSECOND OPTOELECTRONIC SWITCHING IN GAAS [J].

LEE, CH .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :84-86

[9] ELECTRICAL TRANSPORT PROPERTIES OF INSULATING FERROMAGNETIC SPINELS CDCR2S4 AND CDCR2SE4 [J].

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (03) :1389-&

[10] HIGH-SPEED INP OPTOELECTRONIC SWITCH [J].

LEONBERGER, FJ ;

MOULTON, PF .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :712-714

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