LOW-TEMPERATURE THERMAL-EXPANSION OF SILICON

In connection with the results of high-resolution X-ray diffraction, thermal expansion of single-crystal specimens of silicon has been measured in the temperature range of 90–300 K at intervals of 1 K. The experiment is based on a new method, the dual-capacitance technique, which independently detects the movement of the top and bottom surfaces of a specimen; a change in the length perpendicular to the surface planes can therefore be determined reproducibly and accurately. Measurements are made of a few specimens in the crystallographic directions [111], [110] and [100]; the results for heating and cooling show no appreciable difference in any case. © 1990 The Japan Society of Applied Physics.