DETERMINATION OF INTERFACE LAYERS BY SPECTROSCOPIC ELLIPSOMETRY

被引：35

作者：

THEETEN, JB

ASPNES, DE

机构：

[1] Bell Laboratories, Murray Hill

来源：

THIN SOLID FILMS | 1979年 / 60卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90188-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic ellipsometry has recently proved to be particularly useful for determining the presence and properties of interface layers between a substrate and a dielectric overlayer. The principles and optimum conditions for measuring these layers are given. Examples discussed include Si3N4 on silicon, SiO2 on silicon and GaAs oxide on GaAs. © 1979.

引用

页码：183 / 192

页数：10

共 10 条

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[9] NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GAAS AND ITS PLASMA-GROWN OXIDE
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[10] An Attempt at the AES Evaluation of the Composition of Off-Stoichiometric Silicon Nitride
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