TEMPERATURE-INDEPENDENT CARRIER MOBILITY IN LARGE-GRAIN POLY-SI TRANSISTORS

被引：4

作者：

KATOH, T

机构：

[1] Oki Electric Industry, Co., Ltd., LSI Process Technology Department, Higashiasakawa, Hachioji

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 09期

关键词：

D O I：

10.1109/16.310124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of carrier mobility in large-grain poly-Si transistors has been studied, and the reason why it depends only weekly on the measuring temperature is revealed. In the study, the mobility in each grain is supposed to have the similar temperature dependence as in bulk Si and is formulated as a function of the temperatures. Thermionic emission model considering this temperature dependence shows that the temperature-independent carrier mobility is due to the balance between the increase of the mobility and the decrease of potential barriers.

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收藏

页码：1672 / 1674

页数：3

相关论文

共 10 条

[1] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS [J].

DEXTER, DL ;

SEITZ, F .

PHYSICAL REVIEW, 1952, 86 (06) :964-965

[2] SI-GATE CMOS DEVICES ON A SI LATERAL SOLID-PHASE EPITAXIAL LAYER [J].

HIRASHITA, N ;

KATOH, T ;

ONODA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :548-552

[3] PROCESS AND PERFORMANCE COMPARISON OF AN 8K X 8-BIT SRAM IN 3 STACKED CMOS TECHNOLOGIES [J].

HITE, LR ;

SUNDARESAN, R ;

MALHI, SDS ;

LAM, HW ;

SHAH, AH ;

HESTER, RK ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :548-550

[4] EFFECTS OF TRAP STATE ON FIELD-EFFECT MOBILITY OF MOSFETS FORMED ON LARGE-GRAIN POLYSILICON FILMS [J].

KATOH, T ;

HIRASHITA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2291-L2293

[5] CHARACTERISTICS OF MOSFETS ON LARGE-GRAIN POLYSILICON FILMS [J].

KATOH, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :923-928

[6] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[7]

MIZUSHIMA I, COMMUNICATION

[8] RECRYSTALLIZATION OF AMORPHOUS-SILICON FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FROM SI2H6 GAS [J].

NAKAZAWA, K .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1703-1706

[9] CONSTANT MOBILITY OF TFT WITH DENDRITIC CRYSTALLIZED SILICON IN WIDE TEMPERATURE-RANGE AND RING OSCILLATOR CHARACTERISTICS [J].

NOGUCHI, T ;

KANAISHI, Y .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :543-546

[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254