MODULATION-DOPED MULTIQUANTUM WELLS IN INP/IN0.53GA0.47AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：8

作者：

TAYLOR, LL

KANE, MJ

BASS, SJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.98915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：180 / 182

页数：3

共 10 条

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[2]

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[3]

BASS SJ, IN PRESS 1986 P ADV

[4]

HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS [J].

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ANDERSON, DA ;

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BASS, SJ .

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[6]

PEARSALL TP, 1982, GAINASP ALLOY SEMICO

[7] OPTICAL INVESTIGATION OF MODULATION-DOPED IN0.53GA0.47AS/IN0.48AL0.52AS MULTIPLE QUANTUM WELL HETEROSTRUCTURES [J].

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SHAH, J ;

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SIVCO, D ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :184-186

[8] OPTICAL PROCESSES OF 2D ELECTRON-PLASMA IN GAAS-(ALGA) AS HETEROSTRUCTURES [J].

PINCZUK, A ;

SHAH, J ;

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WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1984, 50 (08) :735-739

[9] HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES [J].

PORTAL, JC ;

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POISSON, MA .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :293-295

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES [J].

WEIMANN, G ;

SCHLAPP, W .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :411-413

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