ETCHING OF GAAS/ALGAAS RIB WAVE-GUIDE STRUCTURES USING BCL3/CL-2/N-2/AR ELECTRON-CYCLOTRON-RESONANCE

被引：18

作者：

CONSTANTINE, C

SHUL, RJ

SULLIVAN, CT

SNIPES, MB

MCCLELLAN, GB

HAFICH, M

FULLER, CT

MILEHAM, JR

PEARTON, SJ

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.588128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An anisotropic nonselective etch for GaAs/AlGaAs rib waveguides has been developed for use under electron cyclotron resonance conditions. The plasma chemistry features BCl3 to minimize AlGaAs oxidation effects and small additions of N-2 to induce sidewall protection when using photoresist masks. The fundamental mode attenuation hi GaAs/AlGaAs waveguides is sensitive to the choice of both plasma chemistry and masking material, but can be reduced to <1 dB cm(-1) for channel widths of 4-5 mu m. (C) 1995 American Vacuum Society.

引用

页码：2025 / 2030

页数：6

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