EQUAL RATE AND ANISOTROPIC REACTIVE ION ETCHING OF GAAS/ALGAAS HETEROSTRUCTURES IN SICL4 PLASMA

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655

[2] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 151 - 155

[3] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[4] DZIOBA S, 1984, OCT EL SOC NEW ORL, V842, P506

[5] Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[6] Holliday AK, 1973, COMPREHENSIVE INORGA

[7] Kubaschewski O., 1979, METALLURGICAL THERMO

[8] ORIENTATION DEPENDENT REACTIVE ION ETCHING OF GAAS IN SICL4 [J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 897 - 899

[9] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1216 - 1226

[10] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 719 - 721

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655

[2] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 151 - 155

[3] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[4] DZIOBA S, 1984, OCT EL SOC NEW ORL, V842, P506

[5] Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[6] Holliday AK, 1973, COMPREHENSIVE INORGA

[7] Kubaschewski O., 1979, METALLURGICAL THERMO

[8] ORIENTATION DEPENDENT REACTIVE ION ETCHING OF GAAS IN SICL4 [J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 897 - 899

[9] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1216 - 1226

[10] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 719 - 721