ANISOTROPIC ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAINP/ALGALNP HETEROSTRUCTURES

被引：36

作者：

SHUL, RJ ^{[1
]}

SCHNEIDER, RP ^{[1
]}

CONSTANTINE, C ^{[1
]}

机构：

[1] PLASMA THERM INC,ST PETERSBURG,FL 33716

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 10期

关键词：

ETCHING; SEMICONDUCTORS;

D O I：

10.1049/el:19940550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anisotropic dry etching of GaInP/AlGaInP heterostructures has been achieved for the first time in a high-ion-density electron cyclotron resonance (ECR)-generated plasma. Structures consisting of AlInP/(GaInP/AlGaInP)/AlInP and AlGaAs/(GaInP/AlGaInP)/AlGaAs heterostructures have been etched in a CH4/H-2/Cl2/BCl3/Ar plasma with smooth sidewalls and surface morphologies.

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收藏

页码：817 / 819

页数：3

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