635 NM GAINP/GAALINP SURFACE-EMITTING LASER-DIODES

被引：4

作者：

OU, SS ^{[1
]}

YANG, JJ ^{[1
]}

JANSEN, M ^{[1
]}

机构：

[1] TRW CO INC,RES CTR,SPACE & ELECTR GRP,REDONDO BEACH,CA 90278

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithic, in-plane visible surface-emitting laser diodes operating at 635 nm have been demonstrated. Both the deflecting 45-degrees and 90-degrees micromirrors were fabricated by ion beam etching. An interesting self-optical-annealing phenomenon was observed from these facet-etched GaInP/GaAlInP devices. By employing this unique characteristic, pulsed output powers of 170 mW, and 70 mW at room temperature were achieved from etched-cleaved and etched-etched uncoated devices, respectively. Output powers will increase to 725 mW with facet coatings.

引用

页码：3262 / 3264

页数：3

共 10 条

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