INVESTIGATIONS OF DRY ETCHING IN ALGAINP/GAINP USING CCL2F2/AR REACTIVE ION ETCHING AND AR ION-BEAM ETCHING

被引：7

作者：

HOMMEL, J

MOSER, M

GEIGER, M

SCHOLZ, F

SCHWEIZER, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on investigations of dry etching in GaInP/AlGaInP. As a method of dry etching we used CCl2F2/Ar reactive ion etching (RIE) and Ar ion beam etching (IBE). The suitability of these two methods for microstructure technology with respect to etch rates in investigated. First data on damage resulting from application of these two dry etching techniques in GaInP/AlGaInP are presented. The degree of damage was detected by performing photoluminescence measurement.

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页码：3526 / 3529

页数：4

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