LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD

[11] HIGHLY CONDUCTIVE AND WIDE BAND-GAP AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1427 - 1431

[12] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L97 - L99

[13] OKUYAMA M, 1985, 17TH C SOL STAT DEV, P185

[14] THE 147-NM PHOTOLYSIS OF DISILANE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769

[15] Peters J. W., 1981, International Electron Devices Meeting, P240

[16] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081

[17] Ritter E., 1962, J MOD OPTIC, V9, P197, DOI [10.1080/713826414, DOI 10.1080/713826414]

[18] STEWARD WB, 1935, PHYS REV, V47, P878

[19] SZE SM, 1969, PHYSICS SEMICONDUCTO

[20] TOYODA Y, 1987, JPN J APPL PHYS, V26

[11] HIGHLY CONDUCTIVE AND WIDE BAND-GAP AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1427 - 1431

[12] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L97 - L99

[13] OKUYAMA M, 1985, 17TH C SOL STAT DEV, P185

[14] THE 147-NM PHOTOLYSIS OF DISILANE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769

[15] Peters J. W., 1981, International Electron Devices Meeting, P240

[16] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081

[17] Ritter E., 1962, J MOD OPTIC, V9, P197, DOI [10.1080/713826414, DOI 10.1080/713826414]

[18] STEWARD WB, 1935, PHYS REV, V47, P878

[19] SZE SM, 1969, PHYSICS SEMICONDUCTO

[20] TOYODA Y, 1987, JPN J APPL PHYS, V26