STRUCTURAL STUDY OF A-SI AND A-SI-H FILMS BY EXAFS AND RAMAN-SCATTERING SPECTROSCOPY

被引：30

作者：

WAKAGI, M ^{[1
]}

OGATA, K ^{[1
]}

NAKANO, A ^{[1
]}

机构：

[1] HITACHI LTD,PROD ENGN RES LAB,TOTSUKA KU,YOKOHAMA 244,KANAGAWA,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.10666

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first-neighbor distance r, its deviation Delta sigma, and bond-angle deviation Delta theta of a-Si and a-Si:H films are determined by extended x-ray-absorption fine-structure and Raman-scattering methods. The r of these materials is longer than that of crystalline Si. This distance increase results from the Delta sigma increment via anharmonicity of the two-body correlation. The values of r and Delta sigma for a-Si:H are smaller than those for a-Si. These reductions of the structural parameters are caused by a hydrogen bonding effect on network relaxation. The Delta sigma is proportional to Delta theta, which implies equal division of storage energy between deviations of bond length and bond angle. The relationship between Delta sigma and Delta theta is in good agreement with calculated network models.

引用

页码：10666 / 10671

页数：6

共 20 条

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