EFFECT OF ANNEALING ON POLYSILICON EMITTER TRANSISTORS

被引：5

作者：

KEYES, EP

TARR, NG

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：179 / 183

页数：5

共 15 条

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[9]

NG CC, 1986, TECH DIGEST IEDM86, P32

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