CONDUCTION TYPE CONTROL OF SI-DOPED GAAS ON (311)A ORIENTED SUBSTRATE BY V/III-FLUX RATIO IN MBE

被引：5

作者：

TAKAMORI, T

WATANABE, K

FUKUNAGA, T

机构：

[1] Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 09期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXY;

D O I：

10.1049/el:19910453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the conduction type of MBE grown Si-doped GaAs on (311)A substrate can be controlled either to be p-type or n-type by changing the V/III flux ratio at the conventional growth temperature of 600-degrees-C. The V/III flux ratio dependence of the electron concentration is also shown.

引用

页码：729 / 730

页数：2

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