CHARACTERIZATION OF TITANIUM NITRIDE FILMS SPUTTER DEPOSITED FROM A HIGH-PURITY TITANIUM NITRIDE TARGET

被引:44
作者
BRAT, T
PARIKH, N
TSAI, NS
SINHA, AK
POOLE, J
WICKERSHAM, C
机构
[1] UNIV N CAROLINA, CHAPEL HILL, NC 27514 USA
[2] AT&T BELL LABS, ALLENTOWN, PA 18103 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期
关键词
D O I
10.1116/1.583630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1741 / 1747
页数:7
相关论文
共 52 条
[1]   FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J].
ADAMS, ED ;
AHN, KY ;
BRODSKY, SB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2264-2267
[2]   INVESTIGATION OF TIN FILMS REACTIVELY SPUTTERED USING A SPUTTER GUN [J].
AHN, KY ;
WITTMER, M ;
TING, CY .
THIN SOLID FILMS, 1983, 107 (01) :45-54
[3]   PROPERTIES OF REACTIVELY SPUTTERED TUNGSTEN FILMS IN NITROGEN AND OXYGEN [J].
AHN, KY ;
BRODSKY, SB ;
TING, CY ;
KIM, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3111-3116
[4]   ION-IMPLANTED, ELECTRON-BEAM ANNEALED TIN FILMS AS DIFFUSION-BARRIERS FOR AL ON SI SHALLOW JUNCTIONS [J].
ARMIGLIATO, A ;
FINETTI, M ;
GARRIDO, J ;
GUERRI, S ;
OSTOJA, P ;
SCORZONI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2237-2241
[5]   A CORRELATION OF AUGER-ELECTRON SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND RUTHERFORD BACKSCATTERING SPECTROMETRY MEASUREMENTS ON SPUTTER-DEPOSITED TITANIUM NITRIDE THIN-FILMS [J].
BURROW, BJ ;
MORGAN, AE ;
ELLWANGER, RC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2463-2469
[6]  
CHEN S, 1987, JUN P IEEE VLSI MULT, P169
[7]  
CHEUNG NW, 1980, THIN FILM INTERFACES, P323
[8]  
Chu W. K., 1978, BACKSCATTERING SPECT
[9]  
COHEN B, 1987, P MATERIALS RES SOC, V92, P171
[10]   FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J].
DELFINO, M ;
BROADBENT, EK ;
MORGAN, AE ;
BURROW, BJ ;
NORCOTT, MH .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :591-593