DEFECT DEPTH PROFILES IN B+ AND AS+ IMPLANTED SI

被引：7

作者：

BUDINOV, HI ^{[1
]}

KARPUZOV, DS ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST ELECTR,BU-1784 SOFIA,BULGARIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95760-B

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Depth distributions of displaced atoms for boron and arsenic implanted (111) silicon have been studied both by RBS channeling measurements and by a Monte Carlo simulation technique. The experiments and calculations are compared for ion energies of 80 and 160 keV and different doses. The computer code based on TRIM depth distributions takes into account the accumulation, diffusion and migration of the implantation-induced defects.

引用

页码：1041 / 1044

页数：4

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