LOW-TEMPERATURE NH3 ADSORPTION ON CLEAN AMORPHOUS-SILICON AND ON CRYSTALLINE SILICON SURFACES AND NITROGEN BONDING IN HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS - A COMPARATIVE X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY

被引：27

作者：

KUBLER, L

HLIL, EK

BOLMONT, D

PERUCHETTI, JC

机构：

[1] Univ de Haute Alsace, Mulhouse, Fr, Univ de Haute Alsace, Mulhouse, Fr

来源：

THIN SOLID FILMS | 1987年 / 149卷 / 03期

关键词：

D O I：

10.1016/0040-6090(87)90400-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：385 / 392

页数：8

共 15 条

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[7] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
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[8] NITROGEN BONDING CHANGES VERSUS SUBSTRATE-TEMPERATURE EVIDENCED BY XPS IN SINXHY ALLOYS PREPARED WITH NH3
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 945 - 948
[9] EVAPORATED A-SI FILMS WITH LOW ELECTRON-SPIN-RESONANCE DEFECT DENSITY BY HYDROGENATION UNDER NH3 AMBIENT
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[J]. SOLID STATE COMMUNICATIONS, 1983, 48 (01) : 61 - 64
[10] KUBLER L, IN PRESS SURF SCI

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