FILM-EDGE-INDUCED DISLOCATION GENERATION IN SILICON SUBSTRATES .2. APPLICATION OF THE THEORETICAL-MODEL FOR LOCAL OXIDATION PROCESSES ON (001) SILICON SUBSTRATES

被引：56

作者：

VANHELLEMONT, J ^{[1
]}

AMELINCKX, S ^{[1
]}

CLAEYS, C ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3030 HEVERLEE,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2176 / 2188

页数：13

相关论文

共 16 条

[1] APPELS JA, 1970, PHILIPS RES REP, V25, P118
[2] FRANZ G, 1981, SEMICONDUCTOR SILICO, P821
[3] DISLOCATION PROPAGATION AND EMITTER EDGE DEFECTS IN SILICON WAFERS
HU, SM
KLEPNER, SP
SCHWENKER, RO
SETO, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4098 - 4106
[4] DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS
ISOMAE, S
TAMAKI, Y
YAJIMA, A
NANBA, M
MAKI, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1014 - 1019
[5] KOLBESEN BO, 1981, I PHYS C SER, V57, P21
[6] MAGDO I, 1978, J ELECTROCHEM SOC, V126, P932
[7] GENERATION MECHANISM OF DISLOCATIONS IN LOCAL OXIDATION OF SILICON
SHIBATA, K
TANIGUCHI, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1383 - 1387
[8] Timoshenko S, 1961, THEORIE ELASTICITE
[9] A NOVEL SAMPLE PREPARATION TECHNIQUE FOR CROSS-SECTIONAL TEM INVESTIGATION OF INTEGRATED-CIRCUITS
VANHELLEMONT, J
BENDER, H
CLAEYS, C
VANLANDUYT, J
DECLERCK, G
AMELINCKX, S
VANOVERSTRAETEN, R
[J]. ULTRAMICROSCOPY, 1983, 11 (04) : 303 - 305
[10] FILM-EDGE-INDUCED DISLOCATION GENERATION IN SILICON SUBSTRATES .1. THEORETICAL-MODEL
VANHELLEMONT, J
AMELINCKX, S
CLAEYS, C
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2170 - 2175