NANOLITHOGRAPHY AND ITS PROSPECTS AS A MANUFACTURING TECHNOLOGY

被引:51
作者
PEASE, RFW
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 01期
关键词
D O I
10.1116/1.586346
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The resolution requirements for nanolithography can be satisfied; both devices and small-scale circuits with features well below 100 nm have been fabricated. However other requirements such as adequate throughput (about 1 cm2/s) and a precision on feature edge placement of the order of 10 nm over 20 mm remain as serious challenges. Evolving technology may allow us to extend present-day technology such as deep ultraviolet lithography towards 100 nm feature sizes. But to go below that size radically new approaches will probably be needed. Examples include x-ray printing and some form of adaptive alignment in which relative distortion between mask and wafer is tracked.
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页码:278 / 285
页数:8
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