CO/SI(111)INTERFACE - FORMATION OF AN INITIAL COSI2 PHASE AT ROOM-TEMPERATURE

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] LOW-TEMPERATURE TRANSPORT-PROPERTIES OF ULTRATHIN COSI2 EPITAXIAL-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 169 - 171

[3] BADOZ PA, 1985, J PHYS LETT-PARIS, V46, pL979, DOI 10.1051/jphyslet:019850046020097900

[4] IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 911 - 915

[5] WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1984, 107 (01): : 1 - 58

[6] HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION [J]. PHYSICAL REVIEW B, 1987, 35 (09): : 4216 - 4220

[7] LOCAL-STRUCTURE DETERMINATION OF THE CO-SI(111) INTERFACE BY SURFACE ELECTRON ENERGY-LOSS FINE-STRUCTURE TECHNIQUE [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 801 - 809

[8] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2 [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 135 - 141

[9] SUPERCONDUCTIVITY IN NEIGHBORHOOD OF METALLIC CONTACTS [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (12) : 689 - &

[10] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] LOW-TEMPERATURE TRANSPORT-PROPERTIES OF ULTRATHIN COSI2 EPITAXIAL-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 169 - 171

[3] BADOZ PA, 1985, J PHYS LETT-PARIS, V46, pL979, DOI 10.1051/jphyslet:019850046020097900

[4] IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 911 - 915

[5] WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1984, 107 (01): : 1 - 58

[6] HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION [J]. PHYSICAL REVIEW B, 1987, 35 (09): : 4216 - 4220

[7] LOCAL-STRUCTURE DETERMINATION OF THE CO-SI(111) INTERFACE BY SURFACE ELECTRON ENERGY-LOSS FINE-STRUCTURE TECHNIQUE [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 801 - 809

[8] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2 [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 135 - 141

[9] SUPERCONDUCTIVITY IN NEIGHBORHOOD OF METALLIC CONTACTS [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (12) : 689 - &

[10] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469