IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS

被引：39

作者：

ANDO, H

KANBE, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 07期

关键词：

D O I：

10.1016/0038-1101(81)90191-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：629 / 634

页数：6

相关论文

共 27 条

[21] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS [J].

STILLMAN, GE ;

WOLFE, CM ;

ROSSI, JA ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :471-474

[22] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

STURGE, MD .

PHYSICAL REVIEW, 1962, 127 (03) :768-+

[23] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

NAKAGOME, H ;

MIKAMI, O ;

ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

[24] PUNCH-THROUGH TYPE IN GAAS PHOTODETECTOR FABRICATED BY VAPOR-PHASE EPITAXY [J].

SUSA, N ;

YAMAUCHI, Y ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (05) :542-545

[25] INGAASP-INP AVALANCHE PHOTO-DIODE [J].

TAKANASHI, Y ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2065-2066

[26] USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS [J].

WOODS, MH ;

JOHNSON, WC ;

LAMPERT, MA .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :381-394

[27] ZN DIFFUSION IN INXGA1-XAS WITH ZNAS2 SOURCE [J].

YAMAMOTO, Y ;

KANBE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :121-128