RESIDUAL-STRESS AND STRAIN DISTRIBUTION ANOMALIES IN TIN FILMS DEPOSITED BY PHYSICAL VAPOR-DEPOSITION

The residual stress, lattice parameters and strain-broadening of diffraction peaks have been studied in a series of TiN films deposited on a C3 cemented carbide substrate by reactive magnetron sputtering. The substrate bias voltage and the sputter target input power were varied. It was found that complex residual stress situations could exist where, for example, (220) planes could exhibit high compressive and shear stress, (422) planes, simple low tensile stress and (333)-(511) planes, simple low compressive stress conditions within a given film. The observed residual stress behavioral patterns fell into three groups depending upon the deposition conditions. In addition, the lattice parameters and peak broadening showed positive or negative deviations from the average values of the remaining planes, specific within each behavioral pattern range. It is thought that these effects are associated with the dramatic increases in the defect and stacking fault population found with increasing bias, and with the ultramicrocracking on (220) planes, which have been reported in the literature from transmission electron microscopy studies of TiN films made by physical vapor deposition methods. © 1989.