GROWTH MODE AND SURFACE-STRUCTURES ON THE PB/SI(001) SYSTEM OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

被引：28

作者：

ITOH, H

TANABE, H

WINAU, D

SCHMID, AK

ICHINOKAWA, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth mode and surface structures of the Pb/Si(001) system have been investigated by scanning tunneling microscopy. The growth mode is the Stranski-Krastanov type and Pb grows layer by layer up to three layers before three dimensional (3D) nucleation of Pb islands occurs. The structure of the first layer changes from 2X2 and 2X1, passing through intermediate phases of 2X4 and c(8X4) with mixing by increasing Pb coverage. The second layer is a 2X1 structure, and the third layer is a c(4X4) structure. 3D islands of triangular shapes grow on the third layer of c(4X4) in an orientation of Pb(111)\\Si(001) at coverages higher than 2 monolayers.

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页码：2086 / 2089

页数：4

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