ACTIVATION-ENERGY FOR ELECTROMIGRATION FAILURE IN ALUMINUM FILMS CONTAINING COPPER

被引：39

作者：

DHEURLE, FM

SHINE, MC

AINSLIE, NG

GANGULEE, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.1316583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：289 / &

共 18 条

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[6] ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1409 - &
[7] EFFECT OF COPPER ADDITIONS ON ELECTROMIGRATION IN ALUMINUM THIN FILMS
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[8] CALCULATION OF ENTROPIES OF SOLUTE ATOMS FROM SOLID SOLUBILITIES
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[9] EFFECT OF ALLOY ADDITIONS ON ELECTROMIGRATION FAILURES IN THIN ALUMINUM FILMS
GANGULEE, A
DHEURLE, FM
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (03) : 76 - &
[10] GORDON P, 1963, T AIME, V227, P969