PATHWAYS FOR DIMER STRING GROWTH DURING SI DEPOSITION ON SI(100)-2X1

被引：32

作者：

ZHANG, ZY ^{[1
]}

LU, YT ^{[1
]}

METIU, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

来源：

SURFACE SCIENCE | 1991年 / 255卷 / 03期

关键词：

D O I：

10.1016/0167-2584(91)90180-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We use the Stillinger-Weber potential to calculate the energy barriers for a large number of atomic jumps on the Si(100)-2 x 1 surface. These calculations take into account the reconstruction of the surface and the effect of the atoms occupying the neighboring sites. We isolate the set of jumps through which the adsorbed Si atoms aggregate to form the string-like islands observed experimentally.

引用

页码：L543 / L549

页数：7

共 36 条

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