ANISOTROPIC KINETICS AND BILAYER EPITAXIAL-GROWTH OF SI(001)

被引：27

作者：

WILBY, MR ^{[1
]}

CLARKE, S ^{[1
]}

KAWAMURA, T ^{[1
]}

VVEDENSKY, DD ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.40.10617

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10617 / 10620

页数：4

共 17 条

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BARNETT, SA
ROCKETT, A
[J]. SURFACE SCIENCE, 1988, 198 (1-2) : 133 - 150
[3] CHADI DJ, 1987, PHYS REV LETT, V59, P15
[4] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER
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VVEDENSKY, DD
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342
[5] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[6] GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY
CLARKE, S
VVEDENSKY, DD
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2272 - 2283
[7] SIMULATION OF RECOVERY KINETICS IN SI(001) MOLECULAR-BEAM EPITAXY
CLARKE, S
WILBY, MR
VVEDENSKY, DD
KAWAMURA, T
[J]. PHYSICAL REVIEW B, 1989, 40 (02): : 1369 - 1372
[8] GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6559 - 6562
[9] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING
FARROW, RFC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907
[10] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
ICHIKAWA, M
DOI, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1141 - 1143

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