DIMER STRINGS, ANISOTROPIC GROWTH, AND PERSISTENT LAYER-BY-LAYER EPITAXY

被引：36

作者：

TSAO, JY ^{[1
]}

CHASON, E ^{[1
]}

KOEHLER, U ^{[1
]}

HAMERS, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.40.11951

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11951 / 11954

页数：4

共 19 条

[1] MONTE-CARLO SIMULATIONS OF SI(001) GROWTH AND RECONSTRUCTION DURING MOLECULAR-BEAM EPITAXY [J].

BARNETT, SA ;

ROCKETT, A .

SURFACE SCIENCE, 1988, 198 (1-2) :133-150

[2] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[3] GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY [J].

CLARKE, S ;

VVEDENSKY, DD .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2272-2283

[4] BIRTH DEATH MODELS OF EPITAXY .1. DIFFRACTION OSCILLATIONS FROM LOW INDEX SURFACES [J].

COHEN, PI ;

PETRICH, GS ;

PUKITE, PR ;

WHALEY, GJ ;

ARROTT, AS .

SURFACE SCIENCE, 1989, 216 (1-2) :222-248

[5] SIMULATION-MODELS OF THE CRYSTAL VAPOR INTERFACE [J].

GILMER, GH ;

BROUGHTON, JQ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :298-304

[6] INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION [J].

GOSSMANN, HJ ;

FELDMAN, LC .

PHYSICAL REVIEW B, 1985, 32 (01) :6-11

[7] RATE-EQUATION MODELING OF EPITAXIAL-GROWTH [J].

KARIOTIS, R ;

LAGALLY, MG .

SURFACE SCIENCE, 1989, 216 (03) :557-578

[8]

KAWAMURA T, 1987, SURF SCI, V181, pL171, DOI 10.1016/0039-6028(87)90191-9

[9] THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS [J].

MADHUKAR, A ;

GHAISAS, SV .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01) :1-130

[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

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