ANISOTROPIC SURFACE MOBILITY OF ALUMINUM ON SI(111) DURING THE INITIAL-STAGE OF VAPOR-DEPOSITION

被引：9

作者：

LEVENSON, LL

USUI, H

YAMADA, I

TAKAGI, T

SWARTZLANDER, AB

机构：

[1] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,SAKYO KU,KYOTO 606,JAPAN

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576255

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1206 / 1209

页数：4

共 12 条

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[5] HANBUCKEN M, 1986, SURF SCI, V16, P133
[6] THE PROPERTIES OF ALUMINUM THIN-FILMS SPUTTER DEPOSITED AT ELEVATED-TEMPERATURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1636 - 1639
[7] AL SURFACE MOBILITY ON SI(111) DURING INITIAL-STAGES OF IONIZED CLUSTER BEAM DEPOSITION
LEVENSON, LL
ASANO, M
TANAKA, T
USUI, H
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1552 - 1556
[8] SURFACE PHASE-SEPARATION OF VICINAL SI(111)
PHANEUF, RJ
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[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (24) : 2563 - 2566
[9] SURFACE PHASE-SEPARATION OF VICINAL SI(111)
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WILLIAMS, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 657 - 657
[10] EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM
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ARAI, K
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 703 - 708

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