THEORY AND PRACTICE OF RF SPUTTERING

[11] HU SM, 1965, OCT EL SOC M BUFF

[12] SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2672 - &

[13] LOGAN JS, UNPUBLISHED DATA

[14] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[15] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &

[16] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[17] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873

[18] PLISKIN WA, TO BE PUBLISHED

[19] PLISKIN WA, 1966, MAY AM CER SOC M WAS

[20] SPUTTERING YIELDS AT VERY LOW BOMBARDING ION ENERGIES [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2345 - &

[11] HU SM, 1965, OCT EL SOC M BUFF

[12] SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2672 - &

[13] LOGAN JS, UNPUBLISHED DATA

[14] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[15] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &

[16] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[17] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873

[18] PLISKIN WA, TO BE PUBLISHED

[19] PLISKIN WA, 1966, MAY AM CER SOC M WAS

[20] SPUTTERING YIELDS AT VERY LOW BOMBARDING ION ENERGIES [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2345 - &