INITIAL-STAGES OF OXIDATION OF GE(111)-C(2X8) STUDIED BY SCANNING TUNNELING MICROSCOPY

被引:10
作者
KLITSNER, T [1 ]
BECKER, RS [1 ]
VICKERS, JS [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 04期
关键词
D O I
10.1103/PhysRevB.44.1817
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reaction of oxygen with the Ge(111)-c(2 X 8) surface has been studied with use of a scanning tunneling microscope. Atomically resolved images of the same area before and after oxygen exposure reveal that, on a room-temperature surface, the primary nucleation sites are the boundaries between domains of different orientations of the c(2 X 8) reconstruction. Point defects and disordered adatom regions can also act as nucleation sites. The c(2 X 8) reconstructed terraces themselves and, unexpectedly, the step risers between terraces are found to be relatively unreactive. At elevated sample temperatures, the surface unreconstructs due to adatom mobility. At these elevated temperatures, the oxide nucleates homogeneously and pins the surface in a disordered adatom configuration. This suggests that facilitated oxidation at elevated sample temperatures is primarily due to degradation of the c(2 X 8) reconstruction. Spectroscopic data from I-V curves are also presented and compared with known electronic spectra.
引用
收藏
页码:1817 / 1824
页数:8
相关论文
共 30 条
[11]   OBSERVATION OF THE EFFECT OF TIP ELECTRONIC STATES ON TUNNEL SPECTRA ACQUIRED WITH THE SCANNING TUNNELING MICROSCOPE [J].
KLITSNER, T ;
BECKER, RS ;
VICKERS, JS .
PHYSICAL REVIEW B, 1990, 41 (06) :3837-3840
[12]  
KLITSNER T, UNPUB
[14]   OXIDATION OF SI(111)-(7X7) AS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
LEIBSLE, FM ;
SAMSAVAR, A ;
CHIANG, TC .
PHYSICAL REVIEW B, 1988, 38 (08) :5780-5783
[15]  
LUDEKE R, 1975, PHYS REV LETT, V18, P1170
[16]   ELUCIDATION OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) USING SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].
LYO, IW ;
AVOURIS, P ;
SCHUBERT, B ;
HOFFMANN, R .
JOURNAL OF PHYSICAL CHEMISTRY, 1990, 94 (11) :4400-4403
[17]   STRUCTURE DETERMINATION OF THE GE(111)-C(2X8) SURFACE BY MEDIUM-ENERGY ION-SCATTERING [J].
MAREE, PMJ ;
NAKAGAWA, K ;
VANDERVEEN, JF ;
TROMP, RM .
PHYSICAL REVIEW B, 1988, 38 (02) :1585-1588
[18]   ADATOMS ON SI(111) AND GE(111) SURFACES [J].
MEADE, RD ;
VANDERBILT, D .
PHYSICAL REVIEW B, 1989, 40 (06) :3905-3913
[19]   INITIAL-STAGES OF OXYGEN-ADSORPTION ON SI(111) - THE STABLE STATE [J].
MORGEN, P ;
HOFER, U ;
WURTH, W ;
UMBACH, E .
PHYSICAL REVIEW B, 1989, 39 (06) :3720-3734
[20]   ORIGIN OF SURFACE-STATES ON SI(111)(7X7) [J].
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1986, 57 (01) :154-157