A SURFACE SPECTROSCOPIC STUDY OF REACTIVE ION-BOMBARDMENT OF SILICON

被引：7

作者：

THOMSON, DJ

HELMS, CR

机构：

[1] Stanford Electronics Laboratory, Stanford University, Stanford

来源：

SURFACE SCIENCE | 1990年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(90)90759-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper we report on a surface spectroscopy and etch yield study of the bombardment of Si by CF3+, SF5+ and CH4+. The bombardment of Mo by CF3+ is also discussed. Ion energies in the range of 0.5 to 3.0 keV were studied. Bombardment by SF5+ yielded the lowest etchant surface concentrations and the smallest deviation from predicted etch yields. The highest surface concentration of etchant was found with CH4+ bombardment. These observations are consistent with the conclusion that the etch yields are explained by physical sputtering perturbed by the formation of involatile surface layers. © 1990.

引用

页码：41 / 47

页数：7

共 17 条

[1] SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J].