THE FORMATION OF DISLOCATIONS AND THEIR INSITU DETECTION DURING SILICON VAPOR-PHASE EPITAXY AT REDUCED TEMPERATURE

被引：18

作者：

PIDDUCK, AJ

ROBBINS, DJ

YOUNG, IM

CULLIS, AG

MARTIN, ASR

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90280-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：417 / 422

页数：6

共 17 条

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