NOVEL FABRICATION PROCESS FOR SI3N4 PASSIVATED INALAS/INGAAS/INP HFETS

被引：13

作者：

DICKMANN, J

RIEPE, K

HASPEKLO, H

MAILE, B

DAEMBKES, H

NICKEL, H

LOSCH, R

SCHLAPP, W

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND,W-5100 AACHEN,GERMANY

[2] BP TELEKOM,RES CTR,W-6100 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; FIELD-EFFECT TRANSISTORS; MICROWAVE DEVICES;

D O I：

10.1049/el:19921179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process technology of fully passivated T-shaped 0.18-mu-m gate length InAlAs/InGaAs/InP HFETs is described. Using material selective etchants, devices realised with this process yielded gate breakdown voltages in excess of 8 V and drain source breakdown voltages in excess of 5 V. The excellent gate characteristics lead to a noise figure of 0.75 dB at 18 GHz with 13 dB associated gain. The extrapolated maximum frequency of oscillation was determined to be f(max) = 290 GHz.

引用

页码：1849 / 1850

页数：2

共 11 条

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[J]. ELECTRONICS LETTERS, 1991, 27 (13) : 1149 - 1150

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