PASSIVATION OF GAAS-FETS WITH PECVD SILICON-NITRIDE FILMS OF DIFFERENT STRESS STATES

被引:52
作者
CHANG, EY
CIBUZAR, GT
PANDE, KP
机构
[1] Unisys Corp, St Paul, MN, USA
关键词
FILMS -- Dielectric - SEMICONDUCTING GALLIUM ARSENIDE -- Applications - SILICON NITRIDE -- Chemical Vapor Deposition;
D O I
10.1109/16.2573
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The passivation of GaAs MESFETs with plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride films of both compressive and tensile stress is reported. Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET characteristics. The shift of MESFET parameters due to passivation was found to be dependent on gate orientation. The experiments show that nitride of tensile stress is preferable for MESFETs with [011-bar] oriented gates. The shifts in VTH,IDSS, and GM of the devices before and after nitride passivation are less than 5% if the nitride of appropriate stress states are used for passivation. The breakdown voltage of the MESFETs after nitride deposition was also studied. It is found that the process with higher hydrogen incorporation tends to reduce the surface oxide and increase the breakdown voltage after nitride deposition. In addition, the passivation of double-channel HEMTs is reported for the first time.
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页码:1412 / 1418
页数:7
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