MORPHOLOGY OF THERMALLY ETCHED GAAS SUBSTRATE AND MOLECULAR-BEAM EPITAXIAL LAYERS GROWN ON ITS SUBSTRATE

被引：5

作者：

SAITO, J

NANBU, K

KONDO, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：26 / 30

页数：5

共 12 条

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[9] EFFECT OF ARSENIC SPECIES (AS-2 OR AS-4) ON THE CRYSTALLOGRAPHIC AND ELECTRONIC-STRUCTURE OF MBE-GROWN GAAS(001) RECONSTRUCTED SURFACES [J].

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