DEPTH PROFILES OF ARSENIC IN SEMICONDUCTOR SILICON BY CHEMICAL ETCHING AND NON-DISPERSIVE ATOMIC FLUORESCENCE SPECTROMETRY WITH HYDRIDE GENERATION

被引：12

作者：

TSUJII, K

KITAZUME, E

机构：

来源：

ANALYTICA CHIMICA ACTA | 1981年 / 125卷 / APR期

关键词：

D O I：

10.1016/S0003-2670(01)85054-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：101 / 108

页数：8

共 22 条

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