MECHANISM OF ARSENIC DIFFUSION INTO SILICON FROM ARSENIC-DOPED OXIDE SOURCE

被引：11

作者：

BEYER, KD ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 04期

关键词：

D O I：

10.1149/1.2133365

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：630 / 632

页数：3

共 10 条

[1] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS [J].

ARAI, E ;

TERUNUMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) :691-+

[2]

BAAK T, 1958, J AM CERAM SOC, V42, P27

[3] NEW PAINT-ON DIFFUSION SOURCE [J].

BEYER, KD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1556-1560

[4]

BEYER KD, 1974, Patent No. 3798081

[5] ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2 [J].

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :110-116

[6] INFLUENCE OF REACTION KINETICS OF O2 AND SOURCE FLOW RATES ON UNIFORMITY OF BORON AND ARSENIC DIFFUSIONS [J].

PAREKH, PC ;

GOLDSTEIN, DR ;

CHAN, TC .

SOLID-STATE ELECTRONICS, 1971, 14 (04) :281-+

[7] SPUN ON ARSENOSILICA FILMS AS SOURCES FOR SHALLOW ARSENIC DIFFUSIONS WITH HIGH SURFACE CONCENTRATION [J].

REINDL, K .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :181-&

[8] EFFECTS OF ATMOSPHERE DURING ARSENIC DIFFUSION IN SILICON FROM DOPEDOXIDE [J].

SAKURAI, T ;

NISHI, H ;

FURUYA, T ;

HASHIMOTO, H ;

SHIBAYAMA, H .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :219-220

[9]

Teshima H., 1969, Bulletin of the Electrotechnical Laboratory, V33, P631

[10] ARSENIC DIFFUSION IN SILICON USING LOW AS2O3-CONTENT BINARY ARSENOSILICATE GLASS SOURCES [J].

WONG, J ;

GHEZZO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1413-+

← 1 →